Design of n-i-p and p-i-n Sb2Se3 solar cells: role of band alignment

Abstract Investigations into novel device architectures and interfaces that enhance charge transport collection are necessary to increase the power conversion efficiency (PCE) of antimony selenide (Sb 2 Se 3 ) solar cells, which have shown great promise as a low-cost high-efficiency alternative conventional silicon-based cells. The current work uses simulations design p-i-n n-i-p Sb -based cell structures. configuration is investigated by comparing distinct electron layer (ETL) materials get best performance. While certain ETL may yield higher efficiencies, J–V curve exhibit S-shaped behavior if there misalignment bands at ETL/absorber interface. To address this issue, proposed double structure introduced achieve proper band alignment conduction offset for transport. A PCE 20.15% was achieved utilizing (ZnO/ZnSe) Spiro-OMeTAD hole (HTL). Further, designed proposing HTL facilitate valence offset. consisting (CuI/CuSCN) used in conjunction with ETL-free 21.72%. simulation study conducted using SCAPS-1D simulator validated versus previously fabricated based on FTO/CdS/Sb /Spiro-OMeTAD/Au.